GaN Semiconductor Devices Market 2020: Trends, Size, Growth and Forecast
As per the analysis by Market Research Future Reports, The Global GaN Semiconductor Devices is estimated to value 25 billion by 2023 expanding at a CAGR of 8% during the review period 2017 from 2023. GaN semiconductor is estimated to have a large demand in the power electronics sector accredited to its unique capability to control electrons more than 1000 times than silicon and is produced at a cheaper cost.
The power electronics and semiconductor markets are perpetual to add more existence and to nurture through several markets. The most important trend that the organization pays attention to is the electrification of automobiles. The adoption of electric vehicles results in a rise in technological advancement and a reduction of cost for automotive semiconductor technology. The automobile manufacturer, Lamborghini, is lessening cost in advancing electric vehicles like Terzo, (electric super sports car). wireless charging is a new trend in the semiconductor and power electronics market. Major Smartphone producers like Samsung and Apple have begun to deploy wireless charging technology in their smartphones. The enterprises also claim that development in semiconductors and power electronics can aid organizations to effectively make the battery capacity better and power management. Furthermore, surging demand for GaN semiconductors in military and space applications is expected to drive the Gan Semiconductor Devices Market owing to, greater stability in radiation surroundings possessed by GaN semiconductors. Gallium nitride semiconductor devices are extensively used in different industrial sectors such as automotive, telecommunications, consumer electronics, and medical sectors.
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The key players of GaN Semiconductor Devices Industry includes Fujitsu Ltd (Japan), Panasonic Semiconductors (Japan), Texas Instruments (U.S.),RF Micro Devices Corporation (U.S.), Osram Opto-semiconductors (Germany), Cree Incorporated (U.S.), Toshiba (Japan), Aixtron SE (Germany), Infineon Technologies (Germany), Gallia Semiconductor (Belgium), ROHM Company Limited (Japan), . NXP Semiconductors (U.S.), Koninklijke Philips N.V. (Netherlands), Nichia Corporation (Japan), and Qorvo (U.S.).
- Based on the type, the gallium nitride semiconductor devices market can be sub-segmented into Opto semiconductor, power semiconductor, and RF semiconductors.
- Based on the wafer size, the gallium nitride semiconductor devices market experience 2 inches, 4 inches, and 6 inches and above.
- Based on the device, the gallium nitride semiconductor devices market can sub-segmented into lighting & laser, transistor, diode, power drivers, rectifier, power ICs, amplifiers, supply& inverter, and switching systems.
- Based on the end-user, the gallium nitride semiconductor devices market can be segmented into end-user which include automotive, telecommunication, aerospace & defense, consumer electronics, and medical.
MRFR in their region-specific analysis of the gallium nitride (GaN) semiconductor devices market specifically included four regions, namely North America, Asia Pacific, Europe, the Middle East & Africa, and Latin America with their detailed volume-wise and value-wise contributions.
North America is presumed to be a prominent region in the gallium nitride semiconductor devices market. The U.S. is a leading market owing to the rapid development in the aerospace and rising demand for semiconductor devices in military, offshore oil & gas exploration, and emergency medical service providers over the for"
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